Low temperature studies of semiconductor surfacesGRAZHULIS, V. A.Progress in surface science. 1991, Vol 36, Num 2, pp 89-175, issn 0079-6816, 87 p.Article

Electron instabilities due to dislocation dangling bonds in silicon crystalsGRAZHULIS, V. A.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 151-154, issn 0033-7579Article

On magnetism of quantum dots and channelsGRAZHULIS, V. A.Solid state communications. 1991, Vol 79, Num 11, pp 917-921, issn 0038-1098Article

On low temperature studies of semiconductor surfacesGRAZHULIS, V. A.Surface science. 1994, Vol 299-300, Num 1-3, pp 1022-1030, issn 0039-6028Article

UPS study of the metal-semiconductor interface Ag-A³ B⁵ (GaAs, InAs, InP, InSb) formation at 10 KARISTOV, V. Y; BOLOTIN, I. L; GRAZHULIS, V. A et al.Physica scripta (Print). 1990, Vol 41, Num 1, pp 88-90, issn 0031-8949Article

Investigation of (001) surfaces of La_1.85Sr_0.15CuO₄: LEED and Auger studiesGRAZHULIS, V. A; EMEL'CHENKO, G. A; IONOV, A. M et al.Physica. C, Superconductivity. 1989, Vol 159, Num 4, pp 404-406Article

Observation d'une nouvelle variété de Ag dans le système InSn(110)+AgARISTOV, V. YU; BOLOTIN, I. L; GRAZHULIS, V. A et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 45, Num 1, pp 49-51, issn 0370-274XArticle

Nouveau type de surstructures sur la surface (100) de l'antiferromagnétique d'Heisenberg cubique EuTeGRAZHULIS, V. A; IONOV, A. M; KULESHOV, V. F et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 46, Num 1, pp 42-45, issn 0370-274XArticle

Electron spectroscopy for (001)Bi2Sr2Can-1CunO2n+4 (n=1, 2); comparative studiesBOLOTIN, I. L; GRAZHULIS, V. A; IONOV, A. M et al.Surface science. 1993, Vol 287-288, pp 630-632, issn 0039-6028, bConference Paper

Interface and Schottky barrier formation in the Gd/GaAs(110) systemCHAIKA, A. N; GRAZHULIS, V. A; IONOV, A. M et al.Surface science. 1999, Vol 433-35, pp 332-336, issn 0039-6028Article

Photoemission study of the reactive Dy/GaAs(110) interfaceCHAIKA, A. N; GRAZHULIS, V. A; IONOV, A. M et al.Surface science. 1999, Vol 433-35, pp 352-356, issn 0039-6028Article

Electrophysical properties of surface phases of In on Si(111)GASPAROV, V. A; GRAZHULIS, V. A; BONDAREV, V. V et al.Solid state communications. 1993, Vol 88, Num 1, pp 51-55, issn 0038-1098Article

Etude du système Si(111)-2×1+Ag dans l'intervalle 8-300 K pour θ=0 à 20 couches monomoléculaires par les méthodes de diffraction d'électrons lents et spectroscopie d'électrons AugerARISTOV, V. YU; BOLOTIN, I. L; GRAZHULIS, V. A et al.ZETF. Pis′ma v redakciû. 1986, Vol 91, Num 4, pp 1411-1426, issn 0044-4510Article

Electron transport in the Si(111)-Cr(√3 × √3)R30°-αSi surface phase and in epitaxial films of CrSi, CrSi2 on Si(111)GASPAROV, V. A; GRAZHULIS, V. A; BONDAREV, V. V et al.Surface science. 1993, Vol 292, Num 3, pp 298-304, issn 0039-6028Article

LEED and spectroscopic studies of (001) surfaces of Nd₂CuO₄ and (NdCe)₂CuO₄ single crystalsABRAMOV, A. A; ABROSIMOV, N. V; GRAZHULIS, V. A et al.Surface science. 1991, Vol 242, Num 1-3, pp 45-49, issn 0039-6028, 5 p.Conference Paper

Electrophysical properties of the surface phases of In and Cr on Si(111)GASPAROV, V. A; GRAZHULIS, V. A; BONDAREV, V. V et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1207-1210, issn 0042-207X, 4 p.Conference Paper

Observation of surface superstructure for a Bi2Sr2CaCu2Ox single crystalAL'TFEDER, I. B; VOLODIN, A. P; GRAZHULIS, V. A et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1989, Vol 50, Num 4, pp 182-184, issn 0370-274X, 3 p.Article

Study of the Gd/GaAs(110) system : interface and Schottky barrier formation at low and room temperaturesCHAIKA, A. N; GRAZHULIS, V. A; IONOV, A. M et al.Applied surface science. 1999, Vol 143, Num 1-4, pp 277-286, issn 0169-4332Article

Electronic structure of the valence band of GdSx and Gd3S4GRAZHULIS, V. A; BOZHKO, S. I; BOLOTIN, I. L et al.Applied surface science. 1996, Vol 104-05, pp 68-72, issn 0169-4332Conference Paper